MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 more reliable execution times

more reliable execution times

SEMI M31-0698 (first published)

A complete purchase specification may require that additional physical properties be specified along with test methods for determining their magnitude

コンピュータおよび通信システム

can be used to facilitate inclusion of such additional physical properties and suitable test methods as may be required in the Specification

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 more reliable execution times1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This